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Observation of Rabi Splitting from Surface Plasmon Coupled Conduction State Transitions in Electrically Excited InAs Quantum Dots

Identifieur interne : 002896 ( Main/Repository ); précédent : 002895; suivant : 002897

Observation of Rabi Splitting from Surface Plasmon Coupled Conduction State Transitions in Electrically Excited InAs Quantum Dots

Auteurs : RBID : Pascal:11-0187828

Descripteurs français

Pascal (Inist)
- Plasmon surface, Arséniure d'indium, Semiconducteur III-V, Composé III-V, Point quantique, Nanomatériau, Autoassemblage, Interface, Réseau(arrangement), Palladium, Couche mince métallique, Contact électrique, Electroluminescence, Oscillation Rabi, Germanium, Nitrure de calcium, Emission spontanée, Phénomène transitoire, InAs, 7320M, 8107T, 8535B, 8107B.

English descriptors

KwdEn :
- Arrays, Calcium nitride, Electric contacts, Electroluminescence, Germanium, III-V compound, III-V semiconductors, Indium arsenides, Interfaces, Metallic thin films, Nanostructured materials, Palladium, Quantum dots, Rabi oscillation, Self-assembly, Spontaneous emission, Surface plasmons, Transients.

Abstract

We demonstrate strong coupling between a surface plasmon and intersublevel transitions in self-assembled InAs quantum dots. The surface plasmon mode exists at the interface between the semiconductor emitter structure and a periodic array of holes perforating a metallic Pd/Ge/Au film that also serves as the top electrical contact for the emitters. Spectrally narrowed quantum-dot electroluminescence was observed for devices with varying subwavelength hole spacing. Devices designed for 9, 10, and 11 μm wavelength emission also exhibit a significant spectral splitting. The association of the splitting with quantum-dot Rabi oscillation is consistent with results from a calculation of spontaneous emission from an interacting plasmonic field and quantum-dot ensemble. The fact that this Rabi oscillation can be observed in an incoherently excited, highly inhomogeneously broadened system demonstrates the utility of intersublevel transitions in quantum dots for investigations of coherent transient and quantum coherence phenomena.

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<author><name sortKey="Davids, Paul" uniqKey="Davids P">Paul Davids</name>
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<term>Germanium</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Indium arsenides</term>
<term>Interfaces</term>
<term>Metallic thin films</term>
<term>Nanostructured materials</term>
<term>Palladium</term>
<term>Quantum dots</term>
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<term>Arséniure d'indium</term>
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<term>Composé III-V</term>
<term>Point quantique</term>
<term>Nanomatériau</term>
<term>Autoassemblage</term>
<term>Interface</term>
<term>Réseau(arrangement)</term>
<term>Palladium</term>
<term>Couche mince métallique</term>
<term>Contact électrique</term>
<term>Electroluminescence</term>
<term>Oscillation Rabi</term>
<term>Germanium</term>
<term>Nitrure de calcium</term>
<term>Emission spontanée</term>
<term>Phénomène transitoire</term>
<term>InAs</term>
<term>7320M</term>
<term>8107T</term>
<term>8535B</term>
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<front><div type="abstract" xml:lang="en">We demonstrate strong coupling between a surface plasmon and intersublevel transitions in self-assembled InAs quantum dots. The surface plasmon mode exists at the interface between the semiconductor emitter structure and a periodic array of holes perforating a metallic Pd/Ge/Au film that also serves as the top electrical contact for the emitters. Spectrally narrowed quantum-dot electroluminescence was observed for devices with varying subwavelength hole spacing. Devices designed for 9, 10, and 11 μm wavelength emission also exhibit a significant spectral splitting. The association of the splitting with quantum-dot Rabi oscillation is consistent with results from a calculation of spontaneous emission from an interacting plasmonic field and quantum-dot ensemble. The fact that this Rabi oscillation can be observed in an incoherently excited, highly inhomogeneously broadened system demonstrates the utility of intersublevel transitions in quantum dots for investigations of coherent transient and quantum coherence phenomena.</div>
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<fC01 i1="01" l="ENG"><s0>We demonstrate strong coupling between a surface plasmon and intersublevel transitions in self-assembled InAs quantum dots. The surface plasmon mode exists at the interface between the semiconductor emitter structure and a periodic array of holes perforating a metallic Pd/Ge/Au film that also serves as the top electrical contact for the emitters. Spectrally narrowed quantum-dot electroluminescence was observed for devices with varying subwavelength hole spacing. Devices designed for 9, 10, and 11 μm wavelength emission also exhibit a significant spectral splitting. The association of the splitting with quantum-dot Rabi oscillation is consistent with results from a calculation of spontaneous emission from an interacting plasmonic field and quantum-dot ensemble. The fact that this Rabi oscillation can be observed in an incoherently excited, highly inhomogeneously broadened system demonstrates the utility of intersublevel transitions in quantum dots for investigations of coherent transient and quantum coherence phenomena.</s0>
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<s5>08</s5>
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<s5>09</s5>
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<s2>NC</s2>
<s5>10</s5>
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<s2>NC</s2>
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<s2>NC</s2>
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Observation of Rabi Splitting from Surface Plasmon Coupled Conduction State Transitions in Electrically Excited InAs Quantum Dots

Observation of Rabi Splitting from Surface Plasmon Coupled Conduction State Transitions in Electrically Excited InAs Quantum Dots

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